Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors.

Autor:	Puebla S; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain., Pucher T; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain., Rouco V; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain., Sanchez-Santolino G; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain.; Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain., Xie Y; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.; School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China., Zamora V; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain., Cuellar FA; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain., Mompean FJ; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain., Leon C; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain., Island JO; Department of Physics and Astronomy, University of Nevada Las Vegas, Las Vegas, Nevada 89154, United States., Garcia-Hernandez M; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain., Santamaria J; GFMC, Department Fisica de Materiales, Facultad de Fisica, Universidad Complutense 28040 Madrid, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain., Munuera C; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain., Castellanos-Gomez A; Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC), Madrid E-28049, Spain.; Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, 28040 Madrid, Spain.
Jazyk:	angličtina
Zdroj:	Nano letters [Nano Lett] 2022 Sep 28; Vol. 22 (18), pp. 7457-7466. Date of Electronic Publication: 2022 Sep 15.
DOI:	10.1021/acs.nanolett.2c02395
Abstrakt:	We demonstrate the fabrication of field-effect transistors based on single-layer MoS 2 and a thin layer of BaTiO 3 (BTO) dielectric, isolated from its parent epitaxial template substrate. Thin BTO provides an ultrahigh-κ gate dielectric effectively screening Coulomb scattering centers. These devices show mobilities substantially larger than those obtained with standard SiO 2 dielectrics and comparable with values obtained with hexagonal boron nitride, a dielectric employed for fabrication of high-performance two-dimensional (2D) based devices. Moreover, the ferroelectric character of BTO induces a robust hysteresis of the current vs gate voltage characteristics, attributed to its polarization switching. This hysteresis is strongly suppressed when the device is warmed up above the tetragonal-to-cubic transition temperature of BTO that leads to a ferroelectric-to-paraelectric transition. This hysteretic behavior is attractive for applications in memory storage devices. Our results open the door to the integration of a large family of complex oxides exhibiting strongly correlated physics in 2D-based devices.
Databáze:	MEDLINE
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