Memory Effects in Nanolaminates of Hafnium and Iron Oxide Films Structured by Atomic Layer Deposition.

Autor: Kalam K; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Otsus M; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Kozlova J; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Tarre A; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Kasikov A; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Rammula R; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Link J; Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia., Stern R; Laboratory of Chemical Physics, National Institute of Chemical Physics and Biophysics, Akadeemia tee 23, 12618 Tallinn, Estonia., Vinuesa G; Department of Electronics, University of Valladolid, Paseo Belén 15, 47011 Valladolid, Spain., Lendínez JM; Department of Electronics, University of Valladolid, Paseo Belén 15, 47011 Valladolid, Spain., Dueñas S; Department of Electronics, University of Valladolid, Paseo Belén 15, 47011 Valladolid, Spain., Castán H; Department of Electronics, University of Valladolid, Paseo Belén 15, 47011 Valladolid, Spain., Tamm A; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia., Kukli K; Institute of Physics, University of Tartu, W. Ostwaldi 1, 50411 Tartu, Estonia.
Jazyk: angličtina
Zdroj: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2022 Jul 28; Vol. 12 (15). Date of Electronic Publication: 2022 Jul 28.
DOI: 10.3390/nano12152593
Abstrakt: HfO 2 and Fe 2 O 3 thin films and laminated stacks were grown by atomic layer deposition at 350 °C from hafnium tetrachloride, ferrocene, and ozone. Nonlinear, saturating, and hysteretic magnetization was recorded in the films. Magnetization was expectedly dominated by increasing the content of Fe 2 O 3 . However, coercive force could also be enhanced by the choice of appropriate ratios of HfO 2 and Fe 2 O 3 in nanolaminated structures. Saturation magnetization was observed in the measurement temperature range of 5-350 K, decreasing towards higher temperatures and increasing with the films' thicknesses and crystal growth. Coercive force tended to increase with a decrease in the thickness of crystallized layers. The films containing insulating HfO 2 layers grown alternately with magnetic Fe 2 O 3 exhibited abilities to both switch resistively and magnetize at room temperature. Resistive switching was unipolar in all the oxides mounted between Ti and TiN electrodes.
Databáze: MEDLINE
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