Purcell Enhancement of Erbium Ions in TiO 2 on Silicon Nanocavities.

Autor: Dibos AM; Nanoscience and Technology Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States., Solomon MT; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Sullivan SE; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Singh MK; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Sautter KE; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Horn CP; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Grant GD; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Lin Y; Nanoscience and Technology Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Wen J; Nanoscience and Technology Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Heremans FJ; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Guha S; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States., Awschalom DD; Center for Molecular Engineering, Argonne National Laboratory, Lemont, Illinois 60439, United States.; Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States.; Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2022 Aug 24; Vol. 22 (16), pp. 6530-6536. Date of Electronic Publication: 2022 Aug 08.
DOI: 10.1021/acs.nanolett.2c01561
Abstrakt: Isolated solid-state atomic defects with telecom optical transitions are ideal quantum photon emitters and spin qubits for applications in long-distance quantum communication networks. Prototypical telecom defects, such as erbium, suffer from poor photon emission rates, requiring photonic enhancement using resonant optical cavities. Moreover, many of the traditional hosts for erbium ions are not amenable to direct incorporation with existing integrated photonics platforms, limiting scalable fabrication of qubit-based devices. Here, we present a scalable approach toward CMOS-compatible telecom qubits by using erbium-doped titanium dioxide thin films grown atop silicon-on-insulator substrates. From this heterostructure, we have fabricated one-dimensional photonic crystal cavities demonstrating quality factors in excess of 5 × 10 4 and corresponding Purcell-enhanced optical emission rates of the erbium ensembles in excess of 200. This easily fabricated materials platform represents an important step toward realizing telecom quantum memories in a scalable qubit architecture compatible with mature silicon technologies.
Databáze: MEDLINE
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