Local Epitaxial Templating Effects in Ferroelectric and Antiferroelectric ZrO 2 .

Autor: Chae K; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States.; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Lombardo SF; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Tasneem N; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Tian M; Institute of Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, Georgia 30318, United States., Kumarasubramanian H; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States.; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States., Hur J; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Chern W; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States., Yu S; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Richter C; NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany., Lomenzo PD; NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany., Hoffmann M; NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany., Schroeder U; NaMLab gGmbH/TU Dresden, Noethnitzer Str. 64 a, Dresden D-01187, Germany., Triyoso D; TEL Technology Center, America, LLC, Albany, New York 12203, United States., Consiglio S; TEL Technology Center, America, LLC, Albany, New York 12203, United States., Tapily K; TEL Technology Center, America, LLC, Albany, New York 12203, United States., Clark R; TEL Technology Center, America, LLC, Albany, New York 12203, United States., Leusink G; TEL Technology Center, America, LLC, Albany, New York 12203, United States., Bassiri-Gharb N; G.W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Bandaru P; Department of Mechanical & Aerospace Engineering, University of California, La Jolla, San Diego, California 92093, United States., Ravichandran J; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089, United States.; Ming Hsieh Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States., Kummel A; Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093, United States., Cho K; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States., Kacher J; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States., Khan AI; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Aug 17; Vol. 14 (32), pp. 36771-36780. Date of Electronic Publication: 2022 Aug 05.
DOI: 10.1021/acsami.2c03151
Abstrakt: Nanoscale polycrystalline thin-film heterostructures are central to microelectronics, for example, metals used as interconnects and high-K oxides used in dynamic random-access memories (DRAMs). The polycrystalline microstructure and overall functional response therein are often dominated by the underlying substrate or layer, which, however, is poorly understood due to the difficulty of characterizing microstructural correlations at a statistically meaningful scale. Here, an automated, high-throughput method, based on the nanobeam electron diffraction technique, is introduced to investigate orientational relations and correlations between crystallinity of materials in polycrystalline heterostructures over a length scale of microns, containing several hundred individual grains. This technique is employed to perform an atomic-scale investigation of the prevalent near-coincident site epitaxy in nanocrystalline ZrO 2 heterostructures, the workhorse system in DRAM technology. The power of this analysis is demonstrated by answering a puzzling question: why does polycrystalline ZrO 2 transform dramatically from being antiferroelectric on polycrystalline TiN/Si to ferroelectric on amorphous SiO 2 /Si?
Databáze: MEDLINE