Optical characterization of deuterated silicon-rich nitride waveguides.

Autor: Chia XX; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore., Chen GFR; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore., Cao Y; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore., Xing P; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore., Gao H; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore., Ng DKT; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore., Tan DTH; Photonics Devices and Systems Group, Engineering Product Development, Singapore University of Technology and Design, 8 Somapah Road, Singapore, 487372, Singapore. dawn_tan@sutd.edu.sg.; Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore. dawn_tan@sutd.edu.sg.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2022 Jul 26; Vol. 12 (1), pp. 12697. Date of Electronic Publication: 2022 Jul 26.
DOI: 10.1038/s41598-022-16889-7
Abstrakt: Chemical vapor deposition-based growth techniques allow flexible design of complementary metal-oxide semiconductor (CMOS) compatible materials. Here, we report the deuterated silicon-rich nitride films grown using plasma-enhanced chemical vapor deposition. The linear and nonlinear properties of the films are characterized, and we experimentally confirm that the silicon-rich nitride films grown with SiD 4 eliminates Si-H and N-H related absorption. The performance of identical waveguides for films grown with SiH 4 and SiD 4 are compared demonstrating a 2 dB/cm improvement in line with that observed in literature. Waveguides fabricated on the SRN:D film are further shown to possess a nonlinear parameter of 95 W -1  m -1 , with the film exhibiting a linear and nonlinear refractive index of 2.46 and 9.8 [Formula: see text] 10 -18 m 2 W -1 respectively.
(© 2022. The Author(s).)
Databáze: MEDLINE
Externí odkaz:
Nepřihlášeným uživatelům se plný text nezobrazuje