Tuning colour centres at a twisted hexagonal boron nitride interface.

Autor: Su C; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA., Zhang F; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Department of Physics, Southern University of Science and Technology, Shenzhen, China.; Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China., Kahn S; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Shevitski B; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA.; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Jiang J; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA., Dai C; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA., Ungar A; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA., Park JH; Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA., Watanabe K; Research Centre for Functional Materials, National Institute for Materials Science, Tsukuba, Japan., Taniguchi T; International Centre for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan., Kong J; Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, USA., Tang Z; Institute of Applied Physics and Materials Engineering, University of Macau, Macau, China., Zhang W; Department of Physics, Southern University of Science and Technology, Shenzhen, China., Wang F; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA., Crommie M; Department of Physics, University of California, Berkeley, CA, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA., Louie SG; Department of Physics, University of California, Berkeley, CA, USA. sglouie@berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. sglouie@berkeley.edu., Aloni S; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. saloni@lbl.gov., Zettl A; Department of Physics, University of California, Berkeley, CA, USA. azettl@berkeley.edu.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA. azettl@berkeley.edu.; Kavli Energy NanoSciences Institute at the University of California, Berkeley, CA, USA. azettl@berkeley.edu.
Jazyk: angličtina
Zdroj: Nature materials [Nat Mater] 2022 Aug; Vol. 21 (8), pp. 896-902. Date of Electronic Publication: 2022 Jul 14.
DOI: 10.1038/s41563-022-01303-4
Abstrakt: The colour centre platform holds promise for quantum technologies, and hexagonal boron nitride has attracted attention due to the high brightness and stability, optically addressable spin states and wide wavelength coverage discovered in its emitters. However, its application is hindered by the typically random defect distribution and complex mesoscopic environment. Here, employing cathodoluminescence, we demonstrate on-demand activation and control of colour centre emission at the twisted interface of two hexagonal boron nitride flakes. Further, we show that colour centre emission brightness can be enhanced by two orders of magnitude by tuning the twist angle. Additionally, by applying an external voltage, nearly 100% brightness modulation is achieved. Our ab initio GW and GW plus Bethe-Salpeter equation calculations suggest that the emission is correlated to nitrogen vacancies and that a twist-induced moiré potential facilitates electron-hole recombination. This mechanism is further exploited to draw nanoscale colour centre patterns using electron beams.
(© 2022. The Author(s), under exclusive licence to Springer Nature Limited.)
Databáze: MEDLINE
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