A synergistic effect of the ion beam sputtered NiO x hole transport layer and MXene doping on inverted perovskite solar cells.

Autor: Din MFU; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Held V; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Ullah S; Department of Physics, University of Balochistan, Quetta, 87300, Pakistan., Sousani S; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Omastova M; Polymer Institute, Slovak Academy of Sciences, Dubravska Cesta 9, 845 41, Bratislava, Slovakia., Nadazdy V; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia.; Centre for Advanced Materials Application, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Shaji A; Institute of Materials and Machine Mechanics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 13, Bratislava, Slovakia., Siffalovic P; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia.; Centre for Advanced Materials Application, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Jergel M; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia.; Centre for Advanced Materials Application, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia., Majkova E; Institute of Physics, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia.; Centre for Advanced Materials Application, Slovak Academy of Sciences, Dubravska Cesta 9, 845 11, Bratislava, Slovakia.
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2022 Jul 28; Vol. 33 (42). Date of Electronic Publication: 2022 Jul 28.
DOI: 10.1088/1361-6528/ac7ed4
Abstrakt: The synergistic effect of high-quality NiO x hole transport layers (HTLs) deposited by ion beam sputtering on ITO substrates and the Ti 3 C 2 T x MXene doping of CH 3 NH 3 PbI 3 (MAPI) perovskite layers is investigated in order to improve the power conversion efficiency (PCE) of p-i-n perovskite solar cells (PSCs). The 18 nm thick NiO x layers are pinhole-free and exhibit large-scale homogeneous surface morphology as revealed by the atomic force microscopy (AFM). The grazing-incidence x-ray diffraction showed a 0.75% expansion of the face-centered cubic lattice, suggesting an excess of oxygen as is typical for non-stoichiometric NiO x . The HTLs were used to fabricate the PSCs with MXene-doped MAPI layers. A PSC with undoped MAPI layer served as a control. The size of MAPI polycrystalline grains increased from 430 ± 80 nm to 620 ± 190 nm on the doping, as revealed by AFM. The 0.15 wt% MXene doping showed a 14.3% enhancement in PCE as compared to the PSC with undoped MAPI. The energy-resolved electrochemical impedance spectroscopy revealed one order of magnitude higher density of defect states in the band gap of MXene-doped MAPI layer, which eliminated beneficial effect of reduced total area of larger MAPI grain boundaries, decreasing short-circuit current. The PCE improvement is attributed to a decrease of the work function from -5.26 eV to -5.32 eV on the MXene doping, which increased open-circuit voltage and fill factor.
(© 2022 IOP Publishing Ltd.)
Databáze: MEDLINE
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