Multi-scale electronics transport properties in non-ideal CVD graphene sheet.

Autor: Bishnoi B; National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Computational Design of Advanced Functional Materials (CD-FMat), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki, 305-8568, Japan. bishnoi.bhupesh@aist.go.jp., Buerkle M; National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Computational Design of Advanced Functional Materials (CD-FMat), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki, 305-8568, Japan., Nakamura H; National Institute of Advanced Industrial Science and Technology (AIST), Research Center for Computational Design of Advanced Functional Materials (CD-FMat), Central 2, Umezono 1-1-1, Tsukuba, Ibaraki, 305-8568, Japan.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2022 Jul 02; Vol. 12 (1), pp. 11214. Date of Electronic Publication: 2022 Jul 02.
DOI: 10.1038/s41598-022-15098-6
Abstrakt: In this work, we benchmark non-idealities and variations in the two-dimensional graphene sheet. We have simulated more than two hundred graphene-based devices structure. We have simulated distorted graphene sheets and have included random, inhomogeneous, asymmetric out-of-plane surface corrugation and in-plane deformation corrugation in the sheet through autocorrelation function in the non-equilibrium Green's function (NEGF) framework to introduce random distortion in flat graphene. These corrugation effects inevitably appear in the graphene sheet due to background substrate roughness or the passivation encapsulation material morphology in the transfer step. We have examined the variation in density of state, propagating density of transmission modes, electronic band structure, electronic density, and hole density in those device structures. We have observed that the surface corrugation increases the electronic and hole density distribution variation across the device and creates electron-hole charge puddles in the sheet. This redistribution of microscopic charge in the sheet is due to the lattice fields' quantum fluctuation and symmetry breaking. Furthermore, to understand the impact of scattered charge distribution on the sheet, we simulated various impurity effects within the NEGF framework. The study's objective is to numerically simulate and benchmark numerous device design morphology with different background materials compositions to elucidate the electrical property of the sheet device.
(© 2022. The Author(s).)
Databáze: MEDLINE
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