| Autor: |
Jamwal NS; Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada.; Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G0C5, Canada., Kiani A; Silicon Hall: Micro/Nano Manufacturing Facility, Faculty of Engineering and Applied Science, Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G 0C5, Canada.; Department of Mechanical and Manufacturing Engineering (MME), Ontario Tech University, 2000 Simcoe St N, Oshawa, ON L1G0C5, Canada. |
| Abstrakt: |
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium oxide, as well as its properties and applications. The polymorphs of Ga 2 O 3 are highlighted and discussed along with their transformation state to β-Ga 2 O 3 . Different processes of synthesis of thin films, nanostructures and bulk gallium oxide are reviewed. The electrical and optical properties of β-gallium oxide are also highlighted, based on the synthesis methods, and the techniques for tuning its optical and electrical properties compared. Based on this information, the current, and the possible future, applications for β-Ga 2 O 3 nanostructures are discussed. |
