Sb 2 Se 3 Thin-Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology.

Autor: Duan Z; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Liang X; Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, China.; Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, China., Feng Y; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Ma H; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Liang B; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Wang Y; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Luo S; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Wang S; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China., Schropp REI; Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, China., Mai Y; Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, China.; Key Laboratory of New Semiconductors and Devices of Guangdong Higher Education Institutes, Jinan University, Guangzhou, 510632, China., Li Z; National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Jul; Vol. 34 (30), pp. e2202969. Date of Electronic Publication: 2022 Jun 20.
DOI: 10.1002/adma.202202969
Abstrakt: Binary Sb 2 Se 3 semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, Sb 2 Se 3 solar cells suffer from complex and unconventional intrinsic defects due to the low symmetry of the quasi-1D crystal structure resulting in a considerable voltage deficit, which limits the ultimate power conversion efficiency (PCE). In this work, the creation of compact Sb 2 Se 3 films with strong [00l] orientation, high crystallinity, minimal deep level defect density, fewer trap states, and low non-radiative recombination loss by injection vapor deposition is reported. This deposition technique enables superior films compared with close-spaced sublimation and coevaporation technologies. The resulting Sb 2 Se 3 thin-film solar cells yield a PCE of 10.12%, owing to the suppressed carrier recombination and excellent carrier transport and extraction. This method thus opens a new and effective avenue for the fabrication of high-quality Sb 2 Se 3 and other high-quality chalcogenide semiconductors.
(© 2022 Wiley-VCH GmbH.)
Databáze: MEDLINE
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