Coherent Interactions between Silicon-Vacancy Centers in Diamond.

Autor:	Day MW; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA., Bates KM; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA., Smallwood CL; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA.; Department of Physics and Astronomy, San José State University, San Jose, California 95192, USA., Owen RC; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA., Schröder T; Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin, Germany., Bielejec E; Sandia National Laboratories, Albuquerque, New Mexico 87185, USA., Ulbricht R; Max Planck Institut für Polymerforschung, Ackermannweg 10, 55128 Mainz, Germany., Cundiff ST; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA.
Jazyk:	angličtina
Zdroj:	Physical review letters [Phys Rev Lett] 2022 May 20; Vol. 128 (20), pp. 203603.
DOI:	10.1103/PhysRevLett.128.203603
Abstrakt:	We report tunable excitation-induced dipole-dipole interactions between silicon-vacancy color centers in diamond at cryogenic temperatures. These interactions couple centers into collective states, and excitation-induced shifts tag the excitation level of these collective states against the background of excited single centers. By characterizing the phase and amplitude of the spectrally resolved interaction-induced signal, we observe oscillations in the interaction strength and population state of the collective states as a function of excitation pulse area. Our results demonstrate that excitation-induced dipole-dipole interactions between color centers provide a route to manipulating collective intercenter states in the context of a congested, inhomogeneous ensemble.
Databáze:	MEDLINE
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