Microfluidics for High Pressure: Integration on GaAs Acoustic Biosensors with a Leakage-Free PDMS Based on Bonding Technology.

Autor: Hammami S; FEMTO-ST Institute, CNRS UMR-6174, Université de Bourgogne Franche-Comté, 25030 Besançon, France., Oseev A; FEMTO-ST Institute, CNRS UMR-6174, Université de Bourgogne Franche-Comté, 25030 Besançon, France., Bargiel S; FEMTO-ST Institute, CNRS UMR-6174, Université de Bourgogne Franche-Comté, 25030 Besançon, France., Zeggari R; FEMTO-Engineering, 15B Avenue des Montboucons, 25030 Besançon, France., Elie-Caille C; FEMTO-ST Institute, CNRS UMR-6174, Université de Bourgogne Franche-Comté, 25030 Besançon, France., Leblois T; FEMTO-ST Institute, CNRS UMR-6174, Université de Bourgogne Franche-Comté, 25030 Besançon, France.
Jazyk: angličtina
Zdroj: Micromachines [Micromachines (Basel)] 2022 May 11; Vol. 13 (5). Date of Electronic Publication: 2022 May 11.
DOI: 10.3390/mi13050755
Abstrakt: Microfluidics integration of acoustic biosensors is an actively developing field. Despite significant progress in "passive" microfluidic technology, integration with microacoustic devices is still in its research state. The major challenge is bonding polymers with monocrystalline piezoelectrics to seal microfluidic biosensors. In this contribution, we specifically address the challenge of microfluidics integration on gallium arsenide (GaAs) acoustic biosensors. We have developed a robust plasma-assisted bonding technology, allowing strong connections between PDMS microfluidic chip and GaAs/SiO 2 at low temperatures (70 °C). Mechanical and fluidic performances of fabricated device were studied. The bonding surfaces were characterized by water contact angle measurement and ATR-FTIR, AFM, and SEM analysis. The bonding strength was characterized using a tensile machine and pressure/leakage tests. The study showed that the sealed chips were able to achieve a limit of high bonding strength of 2.01 MPa. The adhesion of PDMS to GaAs was significantly improved by use of SiO 2 intermediate layer, permitting the bonded chip to withstand at least 8.5 bar of burst pressure. The developed bonding approach can be a valuable solution for microfluidics integration in several types of MEMS devices.
Databáze: MEDLINE