Autor: |
Bieniek M; Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada.; Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland.; Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany., Sadecka K; Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada.; Department of Theoretical Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland., Szulakowska L; Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada., Hawrylak P; Department of Physics, University of Ottawa, Ottawa, ON K1N 6N5, Canada. |
Abstrakt: |
Atomically thin semiconductors from the transition metal dichalcogenide family are materials in which the optical response is dominated by strongly bound excitonic complexes. Here, we present a theory of excitons in two-dimensional semiconductors using a tight-binding model of the electronic structure. In the first part, we review extensive literature on 2D van der Waals materials, with particular focus on their optical response from both experimental and theoretical points of view. In the second part, we discuss our ab initio calculations of the electronic structure of MoS 2 , representative of a wide class of materials, and review our minimal tight-binding model, which reproduces low-energy physics around the Fermi level and, at the same time, allows for the understanding of their electronic structure. Next, we describe how electron-hole pair excitations from the mean-field-level ground state are constructed. The electron-electron interactions mix the electron-hole pair excitations, resulting in excitonic wave functions and energies obtained by solving the Bethe-Salpeter equation. This is enabled by the efficient computation of the Coulomb matrix elements optimized for two-dimensional crystals. Next, we discuss non-local screening in various geometries usually used in experiments. We conclude with a discussion of the fine structure and excited excitonic spectra. In particular, we discuss the effect of band nesting on the exciton fine structure; Coulomb interactions; and the topology of the wave functions, screening and dielectric environment. Finally, we follow by adding another layer and discuss excitons in heterostructures built from two-dimensional semiconductors. |