Laser slice thinning of GaN-on-GaN high electron mobility transistors.

Autor: Tanaka A; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a_tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a_tanaka@nuee.nagoya-u.ac.jp., Sugiura R; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Kawaguchi D; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wani Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Watanabe H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Sena H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Honda Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Igasaki Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wakejima A; Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Aichi, 466-8555, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Amano H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2022 May 05; Vol. 12 (1), pp. 7363. Date of Electronic Publication: 2022 May 05.
DOI: 10.1038/s41598-022-10610-4
Abstrakt: As a newly developed technique to slice GaN substrates, which are currently very expensive, with less loss, we previously reported a laser slicing technique in this journal. In the previous report, from the perspective of GaN substrate processing, we could only show that the GaN substrate could be sliced by a laser and that the sliced GaN substrate could be reused. In this study, we newly investigated the applicability of this method as a device fabrication process. We demonstrated the thinning of GaN-on-GaN high-electron-mobility transistors (HEMTs) using a laser slicing technique. Even when the HEMTs were thinned by laser slicing to a thickness of 50 mm after completing the fabrication process, no significant fracture was observed in these devices, and no adverse effects of laser-induced damage were observed on electrical characteristics. This means that the laser slicing process can be applied even after device fabrication. It can also be used as a completely new semiconductor process for fabricating thin devices with thicknesses on the order of 10 mm, while significantly reducing the consumption of GaN substrates.
(© 2022. The Author(s).)
Databáze: MEDLINE
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