How Valley-Orbit States in Silicon Quantum Dots Probe Quantum Well Interfaces.

Autor: Dodson JP; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Ercan HE; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Corrigan J; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Losert MP; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Holman N; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., McJunkin T; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Edge LF; HRL Laboratories, LLC, 3011 Malibu Canyon Road, Malibu, California 90265, USA., Friesen M; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA., Coppersmith SN; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.; University of New South Wales, Sydney, New South Wales 2052, Australia., Eriksson MA; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
Jazyk: angličtina
Zdroj: Physical review letters [Phys Rev Lett] 2022 Apr 08; Vol. 128 (14), pp. 146802.
DOI: 10.1103/PhysRevLett.128.146802
Abstrakt: The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface.
Databáze: MEDLINE