Reduced Recombination and Improved Performance of CdSe/CdTe Solar Cells due to Cu Migration Induced by Light Soaking.

Autor:	Jamarkattel MK; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Mathew X; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States.; Instituto de Energías Renovables, Universidad Nacional Autónoma de México, Temixco, Morelos 62580, Mexico., Phillips AB; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Bastola E; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Subedi KK; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Alfadhili FK; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Abudulimu A; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Friedl JD; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Awni RA; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Li DB; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Razooqi MA; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Koirala P; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Collins RW; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Yan Y; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Ellingson RJ; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States., Heben MJ; Wright Center for Photovoltaic Innovation and Commercialization, Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio 43606, United States.
Jazyk:	angličtina
Zdroj:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 May 04; Vol. 14 (17), pp. 19644-19651. Date of Electronic Publication: 2022 Apr 22.
DOI:	10.1021/acsami.1c23937
Abstrakt:	The performance of CdTe solar cells has advanced impressively in recent years with the incorporation of Se. Instabilities associated with light soaking and copper reorganization have been extensively examined for the previous generation of CdS/CdTe solar cells, but instabilities in Cu-doped Se-alloyed CdTe devices remain relatively unexplored. In this work, we fabricated a range of CdSe/CdTe solar cells by sputtering CdSe layers with thicknesses of 100, 120, 150, 180, and 200 nm on transparent oxide-coated glass and then depositing CdTe by close-spaced sublimation. After CdCl 2 annealing, Cu-doping, and back metal deposition, a variety of analyses were performed both before and after light soaking to understand the changes in device performance. The device efficiency was degraded with light soaking in most cases, but devices fabricated with a CdSe layer thickness of 120 nm showed reasonably good efficiency initially (13.5%) and a dramatic improvement with light soaking (16.5%). The efficiency improvement is examined within the context of Cu ion reorganization that is well known for CdS/CdTe devices. Low-temperature photoluminescence data and V oc versus temperature measurements indicate a reduction in nonradiative recombination due to the passivation of defects and defect complexes in the graded CdSe x Te 1- x layer.
Databáze:	MEDLINE
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