Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors.

Autor: Liang JW; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Firdaus Y; Physical Science and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.; Currently with Research Center for Electronics and Telecommunication, National Research and Innovation Agency, Jalan Sangkuriang Komplek LIPI Building 20 Level 4, Bandung 40135, Indonesia., Kang CH; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Min JW; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Min JH; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Al Ibrahim RH; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Wehbe N; Imaging and Characterization Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Hedhili MN; Imaging and Characterization Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Kaltsas D; Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens GR-15780, Greece., Tsetseris L; Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens GR-15780, Greece., Lopatin S; Imaging and Characterization Core Labs, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Zheng S; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Ng TK; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Anthopoulos TD; Physical Science and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia., Ooi BS; Photonics Laboratory, Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Jazyk: angličtina
Zdroj: ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2022 Apr 20; Vol. 14 (15), pp. 17889-17898. Date of Electronic Publication: 2022 Apr 11.
DOI: 10.1021/acsami.1c22075
Abstrakt: Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 10 18 cm -3 . The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 10 2 % under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.
Databáze: MEDLINE
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