Modal gain characteristics of a two-section InGaAs/GaAs double quantum well passively mode-locked laser with asymmetric waveguide.

Autor: Qiao Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China. qzhl060910@hainnu.edu.cn., Li X; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore., Sia JXB; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore., Wang W; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore., Wang H; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore. ewanghong@ntu.edu.sg.; School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore. ewanghong@ntu.edu.sg., Li Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Zhao Z; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Li L; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Gao X; National Key Laboratory On High Power Semiconductor Lasers, Changchun University of Science and Technology, No. 7186 Weixing Road, Changchun, 130022, Jilin, China., Bo B; National Key Laboratory On High Power Semiconductor Lasers, Changchun University of Science and Technology, No. 7186 Weixing Road, Changchun, 130022, Jilin, China., Qu Y; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Liu G; Hainan Province Key Laboratory of Laser Technology and Photoelectric Functional Materials, School of Physics and Electronic Engineering, Hainan Normal University, No. 99 Longkun Road, Haikou, 571158, Hainan, China., Liu C; Temasek Laboratories@NTU (TL@NTU), Nanyang Technological University, 50 Nanyang Drive, Singapore, 637553, Singapore. liucy@ntu.edu.sg.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2022 Mar 23; Vol. 12 (1), pp. 5010. Date of Electronic Publication: 2022 Mar 23.
DOI: 10.1038/s41598-022-09136-6
Abstrakt: Monolithic two-section InGaAs/GaAs double quantum well (DQW) passively mode-locked lasers (MLLs) with asymmetric waveguide, consisting of the layers of p-doped AlGaAs waveguide and no-doped InGaAsP waveguide, emitting at ~ 1.06 μm, with a fundamental repetition rate at ~ 19.56 GHz have been demonstrated. Modal gain characteristics, such as a gain bandwidth and a gain peak wavelength of the MLL, as a function of the saturable absorber (SA) bias voltage (V a ) as well as the injection current of gain section (I g ), were investigated by the Hakki-Paoli method. With the increase of V a , the lasing wavelength and net modal gain peak of the MLL both exhibited red-shifts to longer wavelength significantly, while the modal gain bandwidth was narrowed. Both the net modal gain bandwidth and gain peak of the MLL followed a polynomial distribution versus the reverse bias at the absorber section. In addition, for the first time, it was found that V a had an obvious effect on the modal gain characteristics of the MLL.
(© 2022. The Author(s).)
Databáze: MEDLINE
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