Asymmetrically Engineered Nanoscale Transistors for On-Demand Sourcing of Terahertz Plasmons.

Autor:	Barut B; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States.; Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, United States., Cantos-Roman X; Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, United States., Crabb J; Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, United States., Kwan CP; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States.; Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, United States., Dixit R; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Arabchigavkani N; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States.; Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, United States., Yin S; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Nathawat J; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., He K; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Randle MD; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Vandrevala F; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Sugaya T; Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan., Einarsson E; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States.; Department of Materials Design and Innovation, University at Buffalo, the State University of New York, Buffalo, New York 14260-2000, United States., Jornet JM; Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, United States., Bird JP; Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, New York 14260-2500, United States., Aizin GR; Kingsborough College, The City University of New York (CUNY), New York, New York 11235, United States.
Jazyk:	angličtina
Zdroj:	Nano letters [Nano Lett] 2022 Apr 13; Vol. 22 (7), pp. 2674-2681. Date of Electronic Publication: 2022 Mar 21.
DOI:	10.1021/acs.nanolett.1c04515
Abstrakt:	Terahertz (THz) plasma oscillations represent a potential path to implement ultrafast electronic devices and circuits. Here, we present an approach to generate on-chip THz signals that relies on plasma-wave stabilization in nanoscale transistors with specific structural asymmetry. A hydrodynamic treatment shows how the transistor asymmetry supports plasma-wave amplification, giving rise to pronounced negative differential conductance (NDC). A demonstration of these behaviors is provided in InGaAs high-mobility transistors, which exhibit NDC in accordance with their designed asymmetry. The NDC onsets once the drift velocity in the channel reaches a threshold value, triggering the initial plasma instability. We also show how this feature can be made to persist beyond room temperature (to at least 75 °C), when the gating is configured to facilitate a transition between the hydrodynamic and ballistic regimes (of electron-electron transport). Our findings represent a significant step forward for efforts to develop active components for THz electronics.
Databáze:	MEDLINE
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