Antiferroelectric negative capacitance from a structural phase transition in zirconia.

Autor: Hoffmann M; NaMLab gGmbH, 01187, Dresden, Germany. hoffmann@berkeley.edu.; Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA. hoffmann@berkeley.edu., Wang Z; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Tasneem N; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Zubair A; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA., Ravindran PV; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Tian M; Institute for Electronics and Nanotechnology, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Gaskell AA; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Triyoso D; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA., Consiglio S; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA., Tapily K; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA., Clark R; TEL Technology Center, America, LLC, 255 Fuller Rd., Suite 214, Albany, NY, 12203, USA., Hur J; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Pentapati SSK; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Lim SK; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Dopita M; Department of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116, Prague, Czech Republic., Yu S; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Chern W; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA.; Izentis LLC, PO Box 397002, Cambridge, MA, 02139, USA., Kacher J; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA., Reyes-Lillo SE; Departamento de Ciencias Físicas, Universidad Andres Bello, Santiago, 837-0136, Chile., Antoniadis D; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02142, USA., Ravichandran J; Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, 90089, USA., Slesazeck S; NaMLab gGmbH, 01187, Dresden, Germany., Mikolajick T; NaMLab gGmbH, 01187, Dresden, Germany.; Institute of Semiconductors and Microsystems, TU Dresden, Dresden, Germany., Khan AI; School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA. asif.khan@ece.gatech.edu.; School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, USA. asif.khan@ece.gatech.edu.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2022 Mar 09; Vol. 13 (1), pp. 1228. Date of Electronic Publication: 2022 Mar 09.
DOI: 10.1038/s41467-022-28860-1
Abstrakt: Crystalline materials with broken inversion symmetry can exhibit a spontaneous electric polarization, which originates from a microscopic electric dipole moment. Long-range polar or anti-polar order of such permanent dipoles gives rise to ferroelectricity or antiferroelectricity, respectively. However, the recently discovered antiferroelectrics of fluorite structure (HfO 2 and ZrO 2 ) are different: A non-polar phase transforms into a polar phase by spontaneous inversion symmetry breaking upon the application of an electric field. Here, we show that this structural transition in antiferroelectric ZrO 2 gives rise to a negative capacitance, which is promising for overcoming the fundamental limits of energy efficiency in electronics. Our findings provide insight into the thermodynamically forbidden region of the antiferroelectric transition in ZrO 2 and extend the concept of negative capacitance beyond ferroelectricity. This shows that negative capacitance is a more general phenomenon than previously thought and can be expected in a much broader range of materials exhibiting structural phase transitions.
(© 2022. The Author(s).)
Databáze: MEDLINE
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