Dative Epitaxy of Commensurate Monocrystalline Covalent van der Waals Moiré Supercrystal.

Autor: Bian M; Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, School of Materials Science and Engineering, Peking University, Beijing, 100871, China.; Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA., Zhu L; Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China., Wang X; Physics Department, Bryn Mawr College, Bryn Mawr, PA, 19010, USA., Choi J; National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA., Chopdekar RV; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA., Wei S; Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA., Wu L; Division of Physics & Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore., Huai C; Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA., Marga A; Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA., Yang Q; Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China., Li YC; Department of Chemistry, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA., Yao F; Department of Materials Design and Innovation, University at Buffalo, The State University of New York, Buffalo, NY, 14260, USA., Yu T; Division of Physics & Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore., Crooker SA; National High Magnetic Field Laboratory, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA., Cheng XM; Physics Department, Bryn Mawr College, Bryn Mawr, PA, 19010, USA., Sabirianov RF; Department of Physics, University of Nebraska-Omaha, Omaha, NE, 68182, USA., Zhang S; Department of Physics, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA., Lin J; Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Southern University of Science and Technology, Shenzhen, 518055, China., Hou Y; Beijing Key Laboratory for Magnetoelectric Materials and Devices, Beijing Innovation Center for Engineering Science and Advanced Technology, School of Materials Science and Engineering, Peking University, Beijing, 100871, China., Zeng H; Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, 14260, USA.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Apr; Vol. 34 (17), pp. e2200117. Date of Electronic Publication: 2022 Mar 22.
DOI: 10.1002/adma.202200117
Abstrakt: Realizing van der Waals (vdW) epitaxy in the 1980s represents a breakthrough that circumvents the stringent lattice matching and processing compatibility requirements in conventional covalent heteroepitaxy. However, due to the weak vdW interactions, there is little control over film qualities by the substrate. Typically, discrete domains with a spread of misorientation angles are formed, limiting the applicability of vdW epitaxy. Here, the epitaxial growth of monocrystalline, covalent Cr 5 Te 8 2D crystals on monolayer vdW WSe 2 by chemical vapor deposition is reported, driven by interfacial dative bond formation. The lattice of Cr 5 Te 8 , with a lateral dimension of a few tens of micrometers, is fully commensurate with that of WSe 2 via 3 × 3 (Cr 5 Te 8 )/7 × 7 (WSe 2 ) supercell matching, forming a single-crystalline moiré superlattice. This work establishes a conceptually distinct paradigm of thin-film epitaxy, termed "dative epitaxy", which takes full advantage of covalent epitaxy with chemical bonding for fixing the atomic registry and crystal orientation, while circumventing its stringent lattice matching and processing compatibility requirements; conversely, it ensures the full flexibility of vdW epitaxy, while avoiding its poor orientation control. Cr 5 Te 8 2D crystals grown by dative epitaxy exhibit square magnetic hysteresis, suggesting minimized interfacial defects that can serve as pinning sites.
(© 2022 Wiley-VCH GmbH.)
Databáze: MEDLINE
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