| Autor: |
Yu X; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Chen X; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Milosevic MM; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Shen W; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK.; State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai 200240, China., Topley R; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Chen B; Zhejiang Lab, Hangzhou 311100, China., Yan X; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Cao W; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Thomson DJ; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Saito S; Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ, UK., Peacock AC; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Muskens OL; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK., Reed GT; Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK. |
| Abstrakt: |
Germanium (Ge) ion implantation into silicon waveguides will induce lattice defects in the silicon, which can eventually change the crystal silicon into amorphous silicon and increase the refractive index from 3.48 to 3.96. A subsequent annealing process, either by using an external laser or integrated thermal heaters can partially or completely remove those lattice defects and gradually change the amorphous silicon back into the crystalline form and, therefore, reduce the material's refractive index. Utilising this change in optical properties, we successfully demonstrated various erasable photonic devices. Those devices can be used to implement a flexible and commercially viable wafer-scale testing method for a silicon photonics fabrication line, which is a key technology to reduce the cost and increase the yield in production. In addition, Ge ion implantation and annealing are also demonstrated to enable post-fabrication trimming of ring resonators and Mach-Zehnder interferometers and to implement nonvolatile programmable photonic circuits. |
