Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.

Autor: Jorudas J; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Prystawko P; Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland., Šimukovič A; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Aleksiejūnas R; Institute of Photonics and Nanotechnology, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Mickevičius J; Institute of Photonics and Nanotechnology, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania., Kryśko M; Institute of High Pressure Physics PAS (UNIPRESS), ul. Sokołowska 29/37, 01-142 Warsaw, Poland., Michałowski PP; Lukasiewicz Research Network-Institute of Microelectronics and Photonics, al. Lotników 32/46, 02-668 Warsaw, Poland., Kašalynas I; Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), Saulėtekio al. 3, LT-10257 Vilnius, Lithuania.; Institute of Applied Electrodynamics and Telecommunications, Vilnius University, Saulėtekio al. 3, LT-10257 Vilnius, Lithuania.
Jazyk: angličtina
Zdroj: Materials (Basel, Switzerland) [Materials (Basel)] 2022 Jan 31; Vol. 15 (3). Date of Electronic Publication: 2022 Jan 31.
DOI: 10.3390/ma15031118
Abstrakt: A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In 0.165 Al 0.775 Ga 0.06 N/Al 0.6 Ga 0.4 N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 10 13 cm -2 (1.6 × 10 13 cm -2 in theory) with the low-field mobility values of 1590 cm 2 /(V·s) and 8830 cm 2 /(V·s) at the temperatures of 300 K and 77 K, respectively.
Databáze: MEDLINE
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