| Autor: |
Peyyety NA; Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.; Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany., Kumar S; Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.; Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany., Li MK; Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.; Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany., Dehm S; Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany., Krupke R; Institute of Nanotechnology, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.; Institute of Quantum Materials and Technologies, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.; Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany. |
| Abstrakt: |
Graphene, a zero-gap semiconductor, absorbs 2.3% of incident photons in a wide wavelength range as a free-standing monolayer, whereas 50% is expected for ∼90 layers. Adjusting the layer number allows the tailoring of the photoresponse; however, controlling the thickness of multilayer graphene remains challenging on the wafer scale. Nanocrystalline graphene or graphite (NCG) can instead be grown with controlled thickness. We have fabricated photodetectors from NCG that are spectrally flat in the near-infrared to short-wavelength infrared region by tailoring the layer thicknesses. Transfer matrix simulations were used to determine the NCG thickness for maximum light absorption in the NCG layer on a silicon substrate. The extrinsic and intrinsic photoresponse was determined from 1100 to 2100 nm using chromatic aberration-corrected photocurrent spectroscopy. Diffraction-limited hyperspectral photocurrent imaging shows that the biased photoresponse is unipolar and homogeneous across the device area, whereas the short-circuit photoresponse gives rise to positive and negative photocurrents at the electrodes. The intrinsic photoresponses are wavelength-independent, indicative of bolometric and electrothermal photodetection. |
