Zero-Bias Power-Detector Circuits based on MoS 2 Field-Effect Transistors on Wafer-Scale Flexible Substrates.

Autor: Reato E; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.; Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany., Palacios P; Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany., Uzlu B; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.; Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany., Saeed M; Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany., Grundmann A; Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany., Wang Z; School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland., Schneider DS; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.; Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany., Wang Z; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany., Heuken M; Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany.; AIXTRON SE, Dornkaulstrasse 2, 52134, Herzogenrath, Germany., Kalisch H; Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany., Vescan A; Compound Semiconductor Technology, RWTH Aachen University, Sommerfeldstrasse 18, 52074, Aachen, Germany., Radenovic A; School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland., Kis A; School of Engineering, EPFL, BM 2141, Station 17, 1015, Lausanne, Switzerland., Neumaier D; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.; Bergische Universität Wuppertal, Lise-Meitner-Str. 13, 42 119, Wuppertal, Germany., Negra R; Chair of High Frequency Electronics, RWTH-Aachen University, Kopernikusstraße 16, 52074, Aachen, Germany., Lemme MC; AMO GmbH, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.; Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Strasse 25, 52074, Aachen, Germany.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Dec; Vol. 34 (48), pp. e2108469. Date of Electronic Publication: 2022 Feb 17.
DOI: 10.1002/adma.202108469
Abstrakt: The design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on 2D MoS 2 field-effect transistors (FETs) are demonstrated. The MoS 2 FETs are fabricated using a wafer-scale process on 8 μm-thick polyimide film, which, in principle, serves as a flexible substrate. The performances of two chemical vapor deposition MoS 2 sheets, grown with different processes and showing different thicknesses, are analyzed and compared from the single device fabrication and characterization steps to the circuit level. The power-detector prototypes exploit the nonlinearity of the transistors above the cut-off frequency of the devices. The proposed detectors are designed employing a transistor model based on measurement results. The fabricated circuits operate in the Ku-band between 12 and 18 GHz, with a demonstrated voltage responsivity of 45 V W -1 at 18 GHz in the case of monolayer MoS 2 and 104 V W -1 at 16 GHz in the case of multilayer MoS 2 , both achieved without applied DC bias. They are the best-performing power detectors fabricated on flexible substrate reported to date. The measured dynamic range exceeds 30 dB, outperforming other semiconductor technologies like silicon complementary metal-oxide-semiconductor circuits and GaAs Schottky diodes.
(© 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH.)
Databáze: MEDLINE
Externí odkaz: