The SALT-Readout ASIC for Silicon Strip Sensors of Upstream Tracker in the Upgraded LHCb Experiment.

Autor: Abellan Beteta C; Physik-Institut, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland., Andreou D; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Artuso M; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Beiter A; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Blusk S; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Bugiel R; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Bugiel S; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Carbone A; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., Carli I; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Chen B; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China.; Physics and Micro Electronic College, Hunan University, Lushan Road (S), Yuelu District, Changsha 410082, China., Conti N; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., De Benedetti F; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., Ding S; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Ely S; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Firlej M; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Fiutowski T; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Gandini P; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., Germann D; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Grieser N; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Idzik M; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Jiang X; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Krupa W; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Li Y; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Li Z; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Liang X; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Liu S; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Lu Y; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Mackey L; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Moron J; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Mountain R; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Petruzzo M; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., Pham H; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Schmidt B; European Organization for Nuclear Research, CERN, CH-1211 Geneve, Switzerland., Sheng S; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Spadaro Norella E; INFN Sezione di Milano, Via Celoria 16, 20133 Milano, Italy., Swientek K; Physik-Institut, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland., Szumlak T; Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, 30-059 Krakow, Poland., Tobin M; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Wang J; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China., Wilkinson M; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Wu H; Physics Department, Syracuse University, 900 South Crouse Ave, Syracuse, NY 13244, USA., Zhang F; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China.; Physics and Micro Electronic College, Hunan University, Lushan Road (S), Yuelu District, Changsha 410082, China., Zou Q; Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China.
Jazyk: angličtina
Zdroj: Sensors (Basel, Switzerland) [Sensors (Basel)] 2021 Dec 24; Vol. 22 (1). Date of Electronic Publication: 2021 Dec 24.
DOI: 10.3390/s22010107
Abstrakt: SALT, a new dedicated readout Application Specific Integrated Circuit (ASIC) for the Upstream Tracker, a new silicon detector in the Large Hadron Collider beauty (LHCb) experiment, has been designed and developed. It is a 128-channel chip using an innovative architecture comprising a low-power analogue front-end with fast pulse shaping and a 40 MSps 6-bit Analog-to-Digital Converter (ADC) in each channel, followed by a Digital Signal Processing (DSP) block performing pedestal and Mean Common Mode (MCM) subtraction and zero suppression. The prototypes of SALT were fabricated and tested, confirming the full chip functionality and fulfilling the specifications. A signal-to-noise ratio of about 20 is achieved for a silicon sensor with a 12 pF input capacitance. In this paper, the SALT architecture and measurements of the chip performance are presented.
Databáze: MEDLINE
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