| Autor: |
Kumar A; CNR-Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy., Cecchini R; CNR-Institute for Microelectronics and Microsystems, Via Gobetti 101, 40129 Bologna, Italy., Wiemer C; CNR-Institute for Microelectronics and Microsystems, Via C. Olivetti 2, 20864 Agrate Brianza, Italy., Mussi V; CNR-Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy., De Simone S; CNR-Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy., Calarco R; CNR-Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy., Scuderi M; CNR-Institute for Microelectronics and Microsystems, Strada VIII 5, 95121 Catania, Italy., Nicotra G; CNR-Institute for Microelectronics and Microsystems, Strada VIII 5, 95121 Catania, Italy., Longo M; CNR-Institute for Microelectronics and Microsystems, Via del Fosso del Cavaliere 100, 00133 Rome, Italy. |
| Abstrakt: |
Ge-rich Ge-Sb-Te compounds are attractive materials for future phase change memories due to their greater crystallization temperature as it provides a wide range of applications. Herein, we report the self-assembled Ge-rich Ge-Sb-Te/Sb 2 Te 3 core-shell nanowires grown by metal-organic chemical vapor deposition. The core Ge-rich Ge-Sb-Te nanowires were self-assembled through the vapor-liquid-solid mechanism, catalyzed by Au nanoparticles on Si (100) and SiO 2 /Si substrates; conformal overgrowth of the Sb 2 Te 3 shell was subsequently performed at room temperature to realize the core-shell heterostructures. Both Ge-rich Ge-Sb-Te core and Ge-rich Ge-Sb-Te/Sb 2 Te 3 core-shell nanowires were extensively characterized by means of scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, Raman microspectroscopy, and electron energy loss spectroscopy to analyze the surface morphology, crystalline structure, vibrational properties, and elemental composition. |
