Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission.

Autor:	Olorunsola O; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Ojo S; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Material Science and Engineering Program, University of Arkansas, Fayetteville, AR 72701, United States of America., Abernathy G; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Zhou Y; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Amoah S; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Grant PC; Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, United States of America.; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Dou W; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Margetis J; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Tolle J; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Kuchuk A; Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America., Du W; Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, United States of America., Li B; Arktonics LLC, 1339 S. Pinnacle Dr, Fayetteville, AR 72701, United States of America., Zhang YH; School of Electrical, Energy and Computer Engineering, Arizona State University, Phoenix AZ 85034, United States of America., Yu SQ; Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America.; Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, United States of America.
Jazyk:	angličtina
Zdroj:	Nanotechnology [Nanotechnology] 2021 Nov 30; Vol. 33 (8). Date of Electronic Publication: 2021 Nov 30.
DOI:	10.1088/1361-6528/ac38e4
Abstrakt:	In this work, a SiGeSn/GeSn/SiGeSn single quantum well was grown and characterized. The sample has a thicker GeSn well of 22nm compared to a previously reported 9nm well configuration. The thicker well leads to: (i) lowered ground energy level in Γ valley offering more bandgap directness; (ii) increased carrier density in the well; and (iii) improved carrier collection due to increased barrier height. As a result, significantly enhanced emission from the quantum well was observed. The strong photoluminescence (PL) signal allows for the estimation of quantum efficiency (QE), which was unattainable in previous studies. Using pumping-power-dependent PL spectra at 20K, the peak spontaneous QE and external QE were measured as 37.9% and 1.45%, respectively. (© 2021 IOP Publishing Ltd.)
Databáze:	MEDLINE
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