High-Yield Ti 3 C 2 T x MXene-MoS 2 Integrated Circuits.

Autor: Xu X; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Guo T; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Hota MK; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Kim H; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Zheng D; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Liu C; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Hedhili MN; Core Laboratories, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Alsaadi RS; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Zhang X; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia., Alshareef HN; Materials Science and Engineering, Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Dec; Vol. 34 (48), pp. e2107370. Date of Electronic Publication: 2021 Dec 04.
DOI: 10.1002/adma.202107370
Abstrakt: It is very challenging to employ solution-processed conducting films in large-area ultrathin nanoelectronics. Here, spray-coated Ti 3 C 2 T x MXene films as metal contacts are successfully integrated into sub-10 nm gate oxide 2D MoS 2 transistor circuits. Ti 3 C 2 T x films are spray coated on glass substrates followed by vacuum annealing. Compared to the as-prepared sample, vacuum annealed films exhibit a higher conductivity (≈11 000 S cm -1 ) and a lower work function (≈4.5 eV). Besides, the annealed Ti 3 C 2 T x film can be patterned through a standard cleanroom process without peeling off. The annealed Ti 3 C 2 T x film shows a better band alignment for n-type transport in MoS 2 channel with small work function mismatch of 0.06 eV. The MoS 2 film can be uniformly transferred on the patterned Ti 3 C 2 T x surface and then readily processed through the cleanroom process. A large-area array of Ti 3 C 2 T x MXene-MoS 2 transistors is fabricated using different dielectric thicknesses and semiconducting channel sizes. High yield and stable performance for these transistor arrays even with an 8 nm-thick dielectric layer are demonstrated. Besides, several circuits are demonstrated, including rectifiers, negative-channel metal-oxide-semiconductor (NMOS) inverters, and voltage-shift NMOS inverters. Overall, this work indicates the tremendous potential for solution-processed Ti 3 C 2 T x MXene films in large-area 2D nanoelectronics.
(© 2021 Wiley-VCH GmbH.)
Databáze: MEDLINE
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