Fabrication, Characterization, and Modeling of an Aluminum Oxide-Gate Ion-Sensitive Field-Effect Transistor-Based pH Sensor.

Autor: Sinha S; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India.; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Pal T; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India.; Department of Nanoscience and Technology, Central University of Jharkhand, Ranchi, 835222 India., Sharma P; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Kharbanda D; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India.; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Khanna PK; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India.; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Tanwar A; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Sharma R; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India.; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India., Mukhiya R; Academy of Scientific and Innovative Research (AcSIR), Ghaziabad, 201002 India.; CSIR - Central Electronics Engineering Research Institute (CEERI), Pilani, Rajasthan 333031 India.
Jazyk: angličtina
Zdroj: Journal of electronic materials [J Electron Mater] 2021; Vol. 50 (12), pp. 7085-7097. Date of Electronic Publication: 2021 Oct 18.
DOI: 10.1007/s11664-021-09220-z
Abstrakt: The ion-sensitive field-effect transistor (ISFET) is a popular technology utilized for pH sensing applications. In this work, we have presented the fabrication, characterization, and electrochemical modeling of an aluminum oxide (Al 2 O 3 )-gate ISFET-based pH sensor. The sensor is fabricated using well-established metal-oxide-semiconductor (MOS) unit processes with five steps of photolithography, and the sensing film is patterned using the lift-off process. The Al 2 O 3 sensing film is deposited over the gate area using pulsed-DC magnetron-assisted reactive sputtering technique in order to improve the sensor performance. The material characterization of sensing film has been done using x-ray diffraction, field-emission scanning electron microscopy, energy-dispersive spectroscopy, and x-ray photoelectron spectroscopy techniques. The sensor has been packaged using thick-film technology and encapsulated by a dam-and-fill approach. The packaged device has been tested in various pH buffer solutions, and a sensitivity of nearly 42.1 mV/pH has been achieved. A simulation program with integrated circuit emphasis (SPICE) macromodel of the Al 2 O 3 -gate ISFET is empirically derived from the experimental results, and the extracted electrochemical parameters have been reported. The drift and hysteresis characteristics of the Al 2 O 3 -gate ISFET were also studied, and the obtained drift rates for different pH buffer solutions of 4, 7, and 10 are 0.136 μ A/min, 0.124 μ A/min, and 0.108 μ A/min, respectively. A hysteresis of nearly 5.806 μ A has been obtained. The developed sensor has high sensitivity along with low drift and hysteresis.
Competing Interests: Conflict of interestThe authors declare that they have no conflict of interest.
(© The Minerals, Metals & Materials Society 2021.)
Databáze: MEDLINE
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