Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion-Solid Interactions.

Autor: Jakob AM; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia., Robson SG; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia., Schmitt V; School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia., Mourik V; School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia., Posselt M; Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Dresden, 01328, Saxony, Germany., Spemann D; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia.; Leibniz Institute of Surface Engineering (IOM), Leipzig, 04318, Saxony, Germany., Johnson BC; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia., Firgau HR; School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia., Mayes E; RMIT Microscopy and Microanalysis Facility, RMIT University, Melbourne, VIC, 3001, Australia., McCallum JC; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia., Morello A; School of Electrical Engineering and Telecommunications, ARC Centre for Quantum Computation and Communication Technology, UNSW Sydney, Sydney, NSW, 2052, Australia., Jamieson DN; School of Physics, ARC Centre for Quantum Computation and Communication Technology, University of Melbourne, Parkville, VIC, 3010, Australia.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Jan; Vol. 34 (3), pp. e2103235. Date of Electronic Publication: 2021 Nov 12.
DOI: 10.1002/adma.202103235
Abstrakt: Silicon chips containing arrays of single dopant atoms can be the material of choice for classical and quantum devices that exploit single donor spins. For example, group-V donors implanted in isotopically purified 28 Si crystals are attractive for large-scale quantum computers. Useful attributes include long nuclear and electron spin lifetimes of 31 P, hyperfine clock transitions in 209 Bi or electrically controllable 123 Sb nuclear spins. Promising architectures require the ability to fabricate arrays of individual near-surface dopant atoms with high yield. Here, an on-chip detector electrode system with 70 eV root-mean-square noise (≈20 electrons) is employed to demonstrate near-room-temperature implantation of single 14 keV 31 P + ions. The physics model for the ion-solid interaction shows an unprecedented upper-bound single-ion-detection confidence of 99.85 ± 0.02% for near-surface implants. As a result, the practical controlled silicon doping yield is limited by materials engineering factors including surface gate oxides in which detected ions may stop. For a device with 6 nm gate oxide and 14 keV 31 P + implants, a yield limit of 98.1% is demonstrated. Thinner gate oxides allow this limit to converge to the upper-bound. Deterministic single-ion implantation can therefore be a viable materials engineering strategy for scalable dopant architectures in silicon devices.
(© 2021 The Authors. Advanced Materials published by Wiley-VCH GmbH.)
Databáze: MEDLINE
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