Quantum conductors formation and resistive switching memory effects in zirconia nanotubes.

Autor: Vokhmintsev A; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Petrenyov I; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Kamalov R; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia., Weinstein I; NANOTECH Centre, Ural Federal University, Ekaterinburg 620002, Russia.; Institute of Metallurgy of the Ural Branch of the Russian Academy of Sciences, Ekaterinburg, Russia.
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2021 Nov 29; Vol. 33 (7). Date of Electronic Publication: 2021 Nov 29.
DOI: 10.1088/1361-6528/ac2e22
Abstrakt: The prospects of the development of non-volatile memory elements that involve memristive metal-dielectric-metal sandwich structures are due to the possibility of reliably implementing sustained functional states with quantized conductance. In the present paper, we have explored the properties of Zr/ZrO 2 /Au memristors fabricated based on an anodic zirconia layer that consists of an ordered array of vertically oriented non-stoichiometric nanotubes with an outer diameter of 30 nm. The operational stability of the designed memory devices has been analyzed in unipolar and bipolar resistive switching modes. The resistance ratio ≥10 5 between high-resistance (HRS) and low-resistance (LRS) states has been evaluated. It has been found that the LRS conductivity is quantized over a wide range with a fundamental minimum of 0.5 G 0  = 38.74 μ S due to the formation of quantum conductors based on oxygen vacancies (V O ). For Zr/ZrO 2 /Au memristors, resistive switching mechanisms to be sensitive to the migration of V O in an applied electric field have been proposed. It has been shown that the ohmic type and space-charge-limited conductivities are realized in the LRS and HRS, respectively. Besides, we have offered a brief review of parameters for functional metal/zirconia/metal nanolayered structures to create effective memristors with multiple resistive states and a high resistance ratio.
(© 2021 IOP Publishing Ltd.)
Databáze: MEDLINE
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