Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization.

Autor:	Bezshlyakh DD; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany., Spende H; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany., Weimann T; Nanostructuring and Clean Room Center Infrastructure, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany., Hinze P; Nanostructuring and Clean Room Center Infrastructure, Physikalisch-Technische Bundesanstalt, Bundesallee 100, 38116 Braunschweig, Germany., Bornemann S; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany., Gülink J; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany., Canals J; Department of Electronic and Biomedical Engineering, University of Barcelona, Carrer Marti i Franques 1, 08028 Barcelona, Spain., Prades JD; Department of Electronic and Biomedical Engineering, University of Barcelona, Carrer Marti i Franques 1, 08028 Barcelona, Spain., Dieguez A; Department of Electronic and Biomedical Engineering, University of Barcelona, Carrer Marti i Franques 1, 08028 Barcelona, Spain., Waag A; Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.; Laboratory for Emerging Nanometrology, Langer Kamp 6 a/b, 38106 Braunschweig, Germany.; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Hans-Sommer Str. 66, 38106 Braunschweig, Germany.
Jazyk:	angličtina
Zdroj:	Microsystems & nanoengineering [Microsyst Nanoeng] 2020 Oct 19; Vol. 6, pp. 88. Date of Electronic Publication: 2020 Oct 19 (Print Publication: 2020).
DOI:	10.1038/s41378-020-00198-y
Abstrakt:	The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources atthe microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nanoLED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 × 6 array with 400 nm LEDs and a 2 × 32 line array with 200 nm LEDs. These nanoLEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nanoLEDs. Competing Interests: Conflict of interestThe authors declare that they have no conflict of interest. (© The Author(s) 2020.)
Databáze:	MEDLINE
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