Spalling-Induced Liftoff and Transfer of Electronic Films Using a van der Waals Release Layer.

Autor: Blanton EW; KBR, Beavercreek, OH, 45431, USA., Motala MJ; UES, Dayton, OH, 45432, USA., Prusnick TA; KBR, Beavercreek, OH, 45431, USA., Hilton A; KBR, Beavercreek, OH, 45431, USA., Brown JL; KBR, Beavercreek, OH, 45431, USA., Bhattacharyya A; Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, 84112, USA., Krishnamoorthy S; Electrical and Computer Engineering, University of Utah, Salt Lake City, UT, 84112, USA.; Materials Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA., Leedy K; Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA., Glavin NR; Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, 45433, USA., Snure M; Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2021 Oct; Vol. 17 (42), pp. e2102668. Date of Electronic Publication: 2021 Sep 20.
DOI: 10.1002/smll.202102668
Abstrakt: Heterogeneous integration strategies are increasingly being employed to achieve more compact and capable electronics systems for multiple applications including space, electric vehicles, and wearable and medical devices. To enable new integration strategies, the growth and transfer of thin electronic films and devices, including III-nitrides, metal oxides, and 2D materials, using 2D boron nitride (BN)-on-sapphire templates are demonstrated. The van der Waals (vdW) BN layer, in this case, acts as a preferred mechanical release layer for precise separation at the substrate-film interface and leaves a smooth surface suitable for vdW bonding. A tensilely stressed Ni layer sputtered on top of the film induces controlled spalling fracture that propagates at the BN/sapphire interface. By incorporating controlled spalling, the process yield and sensitivity are greatly improved, owed to the greater fracture energy provided by the stressed metal layer relative to a soft tape or rubber stamp. With stress playing a critical role in this process, the influence of residual stress on detrimental cracking and bowing is investigated. Additionally, a back-end selected area lift-off technique is developed which allows for isolation and transfer of individual devices or arbitrary shapes.
(© 2021 Wiley-VCH GmbH.)
Databáze: MEDLINE
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