| Autor: |
Potter MM; Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States., Phelan ME; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States., Balaji P; Solar Power Laboratory, Arizona State University, Tempe, Arizona 85287, United States., Jahelka P; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States., Bauser HC; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States., Glaudell RD; Department of Physics, California Institute of Technology, Pasadena, California 91125, United States., Went CM; Department of Physics, California Institute of Technology, Pasadena, California 91125, United States., Enright MJ; Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States., Needell DR; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States., Augusto A; Solar Power Laboratory, Arizona State University, Tempe, Arizona 85287, United States., Atwater HA; Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, California 91125, United States., Nuzzo RG; Department of Chemistry, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.; Surface and Corrosion Science, School of Engineering Sciences in Chemistry, Biotechnology and Health, KTH Royal Institute of Technology, Stockholm 114 28, Sweden. |
| Abstrakt: |
We report the design, fabrication, and characterization of silicon heterojunction microcells, a new type of photovoltaic cell that leverages high-efficiency bulk wafers in a microscale form factor, while also addressing the challenge of passivating microcell sidewalls to mitigate carrier recombination. We present synthesis methods exploiting either dry etching or laser cutting to realize microcells with native oxide-based edge passivation. Measured microcell performance for both fabrication processes is compared to that in simulations. We characterize the dependence of microcell open-circuit voltage ( V oc ) on the cell area-perimeter ratio and examine synthesis processes that affect edge passivation quality, such as sidewall damage removal, the passivation material, and the deposition technique. We report the highest Si microcell V oc to date (588 mV, for a 400 μm × 400 μm × 80 μm device), demonstrate V oc improvements with deposited edge passivation of up to 55 mV, and outline a pathway to achieve microcell efficiencies surpassing 15% for such device sizes. |
