Smart-cut-like laser slicing of GaN substrate using its own nitrogen.

Autor: Tanaka A; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a_tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a_tanaka@nuee.nagoya-u.ac.jp., Sugiura R; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Kawaguchi D; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Yui T; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wani Y; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Aratani T; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Watanabe H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Sena H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Honda Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Igasaki Y; Electron Tube Division, Research & Development Department, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Amano H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.; National Institute for Materials Science, Tsukuba, 987-6543, Japan.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2021 Sep 09; Vol. 11 (1), pp. 17949. Date of Electronic Publication: 2021 Sep 09.
DOI: 10.1038/s41598-021-97159-w
Abstrakt: We have investigated the possibility of applying lasers to slice GaN substrates. Using a sub-nanosecond laser with a wavelength of 532 nm, we succeeded in slicing GaN substrates. In the laser slicing method used in this study, there was almost no kerf loss, and the thickness of the layer damaged by laser slicing was about 40 µm. We demonstrated that a standard high quality homoepitaxial layer can be grown on the sliced surface after removing the damaged layer by polishing.
(© 2021. The Author(s).)
Databáze: MEDLINE
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