Topological Proximity-Induced Dirac Fermion in Two-Dimensional Antimonene.

Autor: Su SH; Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan., Chuang PY; National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan., Chen HY; Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan., Weng SC; National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan., Chen WC; National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan., Tsuei KD; National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan., Lee CK; Department of Photonics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.; Research Center for Applied Sciences, Academia Sinica, 187 Academia Road, Taipei 11529, Taiwan.; Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan., Yu SH; Department of Materials and Optoelectronics Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan., Chou MM; Department of Materials and Optoelectronics Science, National Sun Yat-sen University, Kaohsiung 80424, Taiwan., Tu LW; Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan., Jeng HT; Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.; Physics Division, National Center for Theoretical Sciences, Hsinchu 30013, Taiwan.; Institute of Physics, Academia Sinica, Taipei 11529, Taiwan., Tu CM; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.; Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan., Luo CW; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan.; Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan.; Institute of Physics, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan., Cheng CM; National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan.; Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan.; Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan.; Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 106335, Taiwan., Chang TR; Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan.; Center for Quantum Frontiers of Research and Technology (QFort), Tainan 701, Taiwan.; Physics Division, National Center for Theoretical Sciences, National Taiwan University, Taipei 10617, Taiwan., Huang JA; Department of Physics, National Cheng Kung University, Taiwan 701, Taiwan.; Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan.
Jazyk: angličtina
Zdroj: ACS nano [ACS Nano] 2021 Sep 28; Vol. 15 (9), pp. 15085-15095. Date of Electronic Publication: 2021 Aug 26.
DOI: 10.1021/acsnano.1c05454
Abstrakt: Antimonene is a promising two-dimensional (2D) material that is calculated to have a significant fundamental bandgap usable for advanced applications such as field-effect transistors, photoelectric devices, and the quantum-spin Hall (QSH) state. Herein, we demonstrate a phenomenon termed topological proximity effect, which occurs between a 2D material and a three-dimensional (3D) topological insulator (TI). We provide strong evidence derived from hydrogen etching on Sb 2 Te 3 that large-area and well-ordered antimonene presents a 2D topological state. Delicate analysis with a scanning tunneling microscope of the evolutionary intermediates reveals that hydrogen etching on Sb 2 Te 3 resulted in the formation of a large area of antimonene with a buckled structure. A topological state formed in the antimonene/Sb 2 Te 3 heterostructure was confirmed with angle-resolved photoemission spectra and density-functional theory calculations; in particular, the Dirac point was located almost at the Fermi level. The results reveal that Dirac fermions are indeed realized at the interface of a 2D normal insulator (NI) and a 3D TI as a result of strong hybridization between antimonene and Sb 2 Te 3 . Our work demonstrates that the position of the Dirac point and the shape of the Dirac surface state can be tuned by varying the energy position of the NI valence band, which modifies the direction of the spin texture of Sb-BL/Sb 2 Te 3 via varying the Fermi level. This topological phase in 2D-material engineering has generated a paradigm in that the topological proximity effect at the NI/TI interface has been realized, which demonstrates a way to create QSH systems in 2D-material TI heterostructures.
Databáze: MEDLINE