| Autor: |
Araujo JJ; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States., Brozek CK; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States., Liu H; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States., Merkulova A; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States., Li X; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States., Gamelin DR; Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States. |
| Abstrakt: |
Degenerately doped metal-oxide nanocrystals (NCs) show localized surface plasmon resonances (LSPRs) that are tunable via their tunable excess charge-carrier densities. Modulation of excess charge carriers has also been used to control magnetism in colloidal doped metal-oxide NCs. The addition of excess delocalized conduction-band (CB) electrons can be achieved through aliovalent doping or by postsynthetic techniques such as electrochemistry or photodoping. Here, we examine the influence of charge-compensating aliovalent dopants on the potentials of excess CB electrons in free-standing colloidal degenerately doped oxide NCs, both experimentally and through modeling. Taking Sn 4+ :In 2 O 3 (ITO) NCs as a model system, we use spectroelectrochemical techniques to examine differences between aliovalent doping and photodoping. We demonstrate that whereas photodoping introduces excess CB electrons by raising the Fermi level relative to the CB edge, aliovalent impurity substitution introduces excess CB electrons by stabilizing the CB edge relative to an externally defined Fermi level. Significant differences are thus observed electrochemically between spectroscopically similar delocalized CB electrons compensated by aliovalent dopants and those compensated by surface cations (e.g., protons) during photodoping. Theoretical modeling illustrates the very different potentials that arise from charge compensation via aliovalent substitution and surface charge compensation. Spectroelectrochemical titrations allow the ITO NC band-edge stabilization as a function of Sn 4+ doping to be quantified. Extremely large capacitances are observed in both In 2 O 3 and ITO NCs, making these NCs attractive for reversible charge-storage applications. |
