Hybrid external-cavity lasers (ECL) using photonic wire bonds as coupling elements.

Autor:	Xu Y; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany., Maier P; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany., Blaicher M; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany., Dietrich PI; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.; Vanguard Automation GmbH, Gablonzer Strasse 10, 76185, Karlsruhe, Germany., Marin-Palomo P; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Hartmann W; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Bao Y; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Peng H; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Billah MR; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.; Vanguard Automation GmbH, Gablonzer Strasse 10, 76185, Karlsruhe, Germany., Singer S; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Troppenz U; Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (HHI), Einsteinufer 37, 10587, Berlin, Germany., Moehrle M; Fraunhofer Institute for Telecommunications, Heinrich Hertz Institute (HHI), Einsteinufer 37, 10587, Berlin, Germany., Randel S; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Freude W; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany., Koos C; Institute of Photonics and Quantum Electronics (IPQ), Karlsruhe Institute of Technology (KIT), Engesserstrasse 5, 76131, Karlsruhe, Germany. christian.koos@kit.edu.; Institute of Microstructure Technology (IMT), KIT, Hermann-von-Helmholtz-Platz 1, 76344, Eggenstein-Leopoldshafen, Germany. christian.koos@kit.edu.; Vanguard Automation GmbH, Gablonzer Strasse 10, 76185, Karlsruhe, Germany. christian.koos@kit.edu.
Jazyk:	angličtina
Zdroj:	Scientific reports [Sci Rep] 2021 Aug 12; Vol. 11 (1), pp. 16426. Date of Electronic Publication: 2021 Aug 12.
DOI:	10.1038/s41598-021-95981-w
Abstrakt:	Combining semiconductor optical amplifiers (SOA) on direct-bandgap III-V substrates with low-loss silicon or silicon-nitride photonic integrated circuits (PIC) has been key to chip-scale external-cavity lasers (ECL) that offer wideband tunability along with small optical linewidths. However, fabrication of such devices still relies on technologically demanding monolithic integration of heterogeneous material systems or requires costly high-precision package-level assembly, often based on active alignment, to achieve low-loss coupling between the SOA and the external feedback circuits. In this paper, we demonstrate a novel class of hybrid ECL that overcome these limitations by exploiting 3D-printed photonic wire bonds as intra-cavity coupling elements. Photonic wire bonds can be written in-situ in a fully automated process with shapes adapted to the mode-field sizes and the positions of the chips at both ends, thereby providing low-loss coupling even in presence of limited placement accuracy. In a proof-of-concept experiment, we use an InP-based reflective SOA (RSOA) along with a silicon photonic external feedback circuit and demonstrate a single-mode tuning range from 1515 to 1565 nm along with side mode suppression ratios above 40 dB and intrinsic linewidths down to 105 kHz. Our approach combines the scalability advantages of monolithic integration with the performance and flexibility of hybrid multi-chip assemblies and may thus open a path towards integrated ECL on a wide variety of integration platforms. (© 2021. The Author(s).)
Databáze:	MEDLINE
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