Photonic Curing of Solution-Processed Oxide Semiconductors with Efficient Gate Absorbers and Minimal Substrate Heating for High-Performance Thin-Film Transistors.

Autor: Weidling AM; Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States., Turkani VS; NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States., Luo B; Characterization Facility, University of Minnesota, Twin Cities, 12 Shepherd Labs, 100 Union Street Southeast, Minneapolis, Minnesota 55455, United States., Schroder KA; NovaCentrix, 400 Parker Drive, Suite 1110, Austin, Texas 78728, United States., Swisher SL; Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, 4-174 Keller Hall, 200 Union Street Southeast, Minneapolis, Minnesota 55455, United States.
Jazyk: angličtina
Zdroj: ACS omega [ACS Omega] 2021 Jun 25; Vol. 6 (27), pp. 17323-17334. Date of Electronic Publication: 2021 Jun 25 (Print Publication: 2021).
DOI: 10.1021/acsomega.1c01421
Abstrakt: In this study, photonic curing is used to rapidly and effectively convert metal-oxide sol-gels to realize high-quality thin-film transistors (TFTs). Photonic curing offers advantages over conventional thermal processing methods such as ultrashort processing time and compatibility with low-temperature substrates. However, previous work on photonically cured TFTs often results in significant heating of the entire substrate rather than just the thin film at the surface. Here, sol-gel indium zinc oxide (IZO)-based TFTs are photonically cured with efficient gate absorbers requiring as few as five pulses using intense white light delivering radiant energy up to 6 J cm -2 . Simulations indicate that the IZO film reaches a peak temperature of ∼590 °C while the back of the substrate stays below 30 °C. The requirements and design guidelines for photonic curing metal-oxide semiconductors for high-performance TFT applications are discussed, focusing on the importance of effective gate absorbers and optimized pulse designs to efficiently and effectively cure sol-gel films. This process yields TFTs with a field-effect mobility of 21.8 cm 2 V -1 s -1 and an I on / I off ratio approaching 10 8 , which exceeds the performance of samples annealed at 500 °C for 1 h. This is the best performance and highest metal-oxide conversion for photonically cured oxide TFTs achieved to date that does not significantly heat the entire thickness of the substrate. Importantly, the conversion from sol-gel precursors to the semiconducting metal-oxide phase during photonic curing is on par with thermal annealing, which is a significant improvement over previous pulsed-light processing work. The use of efficient gate absorbers also allows for the reduction in the number of pulses and efficient sol-gel conversion.
Competing Interests: The authors declare no competing financial interest.
(© 2021 The Authors. Published by American Chemical Society.)
Databáze: MEDLINE
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