| Autor: |
Kim WJ; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Bang IY; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Kim JH; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Park YS; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Kwon HT; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Shin GW; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea., Kang MH; Department of Nano-Process, National Nanofab Center (NNFC), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea., Cho Y; SK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, Korea., Kwon BH; SK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, Korea., Kwak JH; SK Materials Co., Ltd., 110-5, Myeonghaksandan-ro, Yeondong-myeon, Sejong 30068, Korea., Kwon GC; Department of Electrical and Biological Physics, Kwangwoon University, 20 Kwangwoon-ro, Nowon-gu, Seoul 01897, Korea. |
| Abstrakt: |
The use of NF 3 is significantly increasing every year. However, NF 3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF 3 is required. F 3 NO is considered a potential replacement to NF 3 . In this study, the characteristics and cleaning performance of the F 3 NO plasma to replace the greenhouse gas NF 3 were examined. Etching of SiO 2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF 3 and F 3 NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F 3 NO plasma were studied, and the SiO 2 etch rates of the NF 3 and F 3 NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F 3 NO plasma was demonstrated, and the potential benefit of replacing NF 3 with F 3 NO was confirmed. |
