Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices.

Autor: Nukala P; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. pnukala@iisc.ac.in b.noheda@rug.nl.; Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Ahmadi M; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.; CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands., Wei Y; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.; CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands., de Graaf S; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands., Stylianidis E; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.; Department of Physics and Astronomy, University College London, London WC1E 6BT, UK., Chakrabortty T; Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru, 560012, India., Matzen S; Center for Nanoscience and Nanotechnology, Paris-Saclay University, CNRS, 91120 Palaiseau, France., Zandbergen HW; Kavli Institute of Nanoscience, Faculty of Applied Sciences, Delft University of Technology, 2628 CJ Delft, Netherlands., Björling A; MAX IV Laboratory, Lund University, SE-221 00 Lund, Sweden., Mannix D; University Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.; European Spallation Source, SE-221 00 Lund, Sweden.; Department of Chemistry, Aarhus University, DK-8000 Aarhus, Denmark., Carbone D; MAX IV Laboratory, Lund University, SE-221 00 Lund, Sweden., Kooi B; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands.; CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands., Noheda B; Zernike Institute of Advanced Materials, University of Groningen, 9747 AG Groningen, Netherlands. pnukala@iisc.ac.in b.noheda@rug.nl.; CogniGron (Groningen Cognitive Systems and Materials Center), University of Groningen, 9747 AG Groningen, Netherlands.
Jazyk: angličtina
Zdroj: Science (New York, N.Y.) [Science] 2021 May 07; Vol. 372 (6542), pp. 630-635. Date of Electronic Publication: 2021 Apr 15.
DOI: 10.1126/science.abf3789
Abstrakt: Unconventional ferroelectricity exhibited by hafnia-based thin films-robust at nanoscale sizes-presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. We investigated a La 0.67 Sr 0.33 MnO 3 /Hf 0.5 Zr 0.5 O 2 capacitor interfaced with various top electrodes while performing in situ electrical biasing using atomic-resolution microscopy with direct oxygen imaging as well as with synchrotron nanobeam diffraction. When the top electrode is oxygen reactive, we observe reversible oxygen vacancy migration with electrodes as the source and sink of oxygen and the dielectric layer acting as a fast conduit at millisecond time scales. With nonreactive top electrodes and at longer time scales (seconds), the dielectric layer also acts as an oxygen source and sink. Our results show that ferroelectricity in hafnia-based thin films is unmistakably intertwined with oxygen voltammetry.
(Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.)
Databáze: MEDLINE
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