Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide.

Autor: Katase T; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan. katase@mces.titech.ac.jp kamiya.t.aa@m.titech.ac.jp., Takahashi Y; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., He X; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Tadano T; National Institute for Materials Science, Sengen, Tsukuba 305-0047, Japan., Ide K; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Yoshida H; The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan., Kawachi S; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Yamaura JI; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Sasase M; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Hiramatsu H; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan.; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Hosono H; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan., Kamiya T; Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan. katase@mces.titech.ac.jp kamiya.t.aa@m.titech.ac.jp.; Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama 226-8503, Japan.
Jazyk: angličtina
Zdroj: Science advances [Sci Adv] 2021 Mar 19; Vol. 7 (12). Date of Electronic Publication: 2021 Mar 19 (Print Publication: 2021).
DOI: 10.1126/sciadv.abf2725
Abstrakt: Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route for a direct three-dimensional (3D) to 2D structural phase transition, demonstrating an example in (Pb 1- x Sn x )Se alloy system, where Pb 2+ and Sn 2+ have similar n s 2 pseudo-closed shell configurations, but the former stabilizes the 3D rock-salt-type structure while the latter a 2D layered structure. However, this system has no direct phase boundary between these crystal structures under thermal equilibrium. We succeeded in inducing the direct 3D-2D structural phase transition in (Pb 1- x Sn x )Se alloy epitaxial films by using a nonequilibrium growth technique. Reversible giant electronic property change was attained at x ~ 0.5 originating in the abrupt band structure switch from gapless Dirac-like state to semiconducting state.
(Copyright © 2021 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).)
Databáze: MEDLINE
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