Autor: |
Novakov S; Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States., Jariwala B; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Vu NM; Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States., Kozhakhmetov A; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Robinson JA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.; Center for 2D and Layered Materials, Center for Atomically Thin Multifunctional Materials and the Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States., Heron JT; Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, United States. |
Abstrakt: |
Rashba spin current generation emerges in heterostructures of ferromagnets and transition metal dichalcogenides (TMDs) due to an interface polarization and associated inversion symmetry breaking. Recent work exploring the synthesis and transfer of epitaxial films on the top of low layer count 2D materials reveals that atomic potentials from the underlying substrate interface are not completely screened. The extension of this transparency effect to other interfacial phenomena, such as the Rashba effect and associated spin torques, has not yet been demonstrated. Here, we report enhanced spin transfer torques from the Rashba spin current in heterostructures of permalloy (Py) and WSe 2 . We show that insertion of up to two monolayers of WSe 2 enhances the spin transfer torques in a Rashba system by up to 3×, without changing the fieldlike Rashba spin-orbit torque (SOT), a measure of interface polarization. Our results indicate that low layer count TMD films can be used as an interfacial "scattering promoter" in heterostructure interfaces without quenching the original polarization. |