ZnS Ultrathin Interfacial Layers for Optimizing Carrier Management in Sb 2 S 3 -based Photovoltaics.

Autor:	Büttner P; Friedrich-Alexander University Erlangen-Nürnberg, Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, IZNF, Cauerstraße 3, 91058 Erlangen, Germany., Scheler F; Friedrich-Alexander University Erlangen-Nürnberg, Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, IZNF, Cauerstraße 3, 91058 Erlangen, Germany.; Universidad de Valencia, Instituto de Ciencia de Materiales, Catedrático J. Beltrán 2, 46980 Paterna, Spain., Pointer C; Lehigh University, Department of Chemistry, 6 East Packer Avenue, Bethlehem, Pennsylvania 18015, United States., Döhler D; Friedrich-Alexander University Erlangen-Nürnberg, Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, IZNF, Cauerstraße 3, 91058 Erlangen, Germany., Yokosawa T; Friedrich-Alexander University Erlangen-Nürnberg, Institute of Micro- and Nanostructure Research, and Center for Nanoanalysis and Electron Microscopy (CENEM), IZNF, Cauerstraße 3, Erlangen, 91058 Germany., Spiecker E; Friedrich-Alexander University Erlangen-Nürnberg, Institute of Micro- and Nanostructure Research, and Center for Nanoanalysis and Electron Microscopy (CENEM), IZNF, Cauerstraße 3, Erlangen, 91058 Germany., Boix PP; Universidad de Valencia, Instituto de Ciencia de Materiales, Catedrático J. Beltrán 2, 46980 Paterna, Spain., Young ER; Lehigh University, Department of Chemistry, 6 East Packer Avenue, Bethlehem, Pennsylvania 18015, United States., Mínguez-Bacho I; Friedrich-Alexander University Erlangen-Nürnberg, Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, IZNF, Cauerstraße 3, 91058 Erlangen, Germany., Bachmann J; Friedrich-Alexander University Erlangen-Nürnberg, Chemistry of Thin Film Materials, Department of Chemistry and Pharmacy, IZNF, Cauerstraße 3, 91058 Erlangen, Germany.; Saint-Petersburg State University, Institute of Chemistry, Universitetskii Prospekt 26, 198504 Saint Petersburg, Russia.
Jazyk:	angličtina
Zdroj:	ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2021 Mar 17; Vol. 13 (10), pp. 11861-11868. Date of Electronic Publication: 2021 Mar 05.
DOI:	10.1021/acsami.0c21365
Abstrakt:	Antimony chalcogenides represent a family of materials of low toxicity and relative abundance, with a high potential for future sustainable solar energy conversion technology. However, solar cells based on antimony chalcogenides present open-circuit voltage losses that limit their efficiencies. These losses are attributed to several recombination mechanisms, with interfacial recombination being considered as one of the dominant processes. In this work, we exploit atomic layer deposition (ALD) to grow a series of ultrathin ZnS interfacial layers at the TiO 2 /Sb 2 S 3 interface to mitigate interfacial recombination and to increase the carrier lifetime. ALD allows for very accurate control over the ZnS interlayer thickness on the ångström scale (0-1.5 nm) and to deposit highly pure Sb 2 S 3 . Our systematic study of the photovoltaic and optoelectronic properties of these devices by impedance spectroscopy and transient absorption concludes that the optimum ZnS interlayer thickness of 1.0 nm achieves the best balance between the beneficial effect of an increased recombination resistance at the interface and the deleterious barrier behavior of the wide-bandgap semiconductor ZnS. This optimization allows us to reach an overall power conversion efficiency of 5.09% in planar configuration.
Databáze:	MEDLINE
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