| Autor: |
Ippolito S; Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France., Kelly AG; School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland., Furlan de Oliveira R; Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France., Stoeckel MA; Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France., Iglesias D; Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France., Roy A; School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland., Downing C; School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland., Bian Z; Cambridge Graphene Centre, Cambridge University, Cambridge, United Kingdom., Lombardi L; Cambridge Graphene Centre, Cambridge University, Cambridge, United Kingdom., Samad YA; Cambridge Graphene Centre, Cambridge University, Cambridge, United Kingdom., Nicolosi V; School of Chemistry, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland., Ferrari AC; Cambridge Graphene Centre, Cambridge University, Cambridge, United Kingdom., Coleman JN; School of Physics, Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), Trinity College Dublin, Dublin, Ireland., Samorì P; Université de Strasbourg, CNRS, ISIS UMR 7006, Strasbourg, France. samori@unistra.fr. |
| Abstrakt: |
Solution-processed semiconducting transition metal dichalcogenides are at the centre of an ever-increasing research effort in printed (opto)electronics. However, device performance is limited by structural defects resulting from the exfoliation process and poor inter-flake electronic connectivity. Here, we report a new molecular strategy to boost the electrical performance of transition metal dichalcogenide-based devices via the use of dithiolated conjugated molecules, to simultaneously heal sulfur vacancies in solution-processed transition metal disulfides and covalently bridge adjacent flakes, thereby promoting percolation pathways for the charge transport. We achieve a reproducible increase by one order of magnitude in field-effect mobility (µ FE ), current ratio (I ON /I OFF ) and switching time (τ S ) for liquid-gated transistors, reaching 10 -2 cm 2 V -1 s -1 , 10 4 and 18 ms, respectively. Our functionalization strategy is a universal route to simultaneously enhance the electronic connectivity in transition metal disulfide networks and tailor on demand their physicochemical properties according to the envisioned applications. |
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