BaZrS 3 Chalcogenide Perovskite Thin Films by H 2 S Sulfurization of Oxide Precursors.

Autor:	Márquez JA; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Rusu M; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Hempel H; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Ahmet IY; Institute of Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Kölbach M; Institute of Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Simsek I; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Choubrac L; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Gurieva G; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Gunder R; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany., Schorr S; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.; Institute of Geological Sciences, Freie Universitaet Berlin, Maltese St. 74-100, 12249 Berlin, Germany., Unold T; Department of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Jazyk:	angličtina
Zdroj:	The journal of physical chemistry letters [J Phys Chem Lett] 2021 Mar 04; Vol. 12 (8), pp. 2148-2153. Date of Electronic Publication: 2021 Feb 24.
DOI:	10.1021/acs.jpclett.1c00177
Abstrakt:	The earth-abundant ternary compound BaZrS 3 , which crystallizes in the perovskite-type structure, has come into view as a promising candidate for photovoltaic applications. We present the synthesis and characterization of polycrystalline perovskite-type BaZrS 3 thin films. BaZrO 3 precursor layers were deposited by pulsed laser deposition and sulfurized at various temperatures in an argon-diluted H 2 S atmosphere. We observe increasing incorporation of sulfur for higher annealing temperatures, accompanied by a red shift of the absorption edge, with a bandgap of E g = 1.99 eV and a large absorption strength >10 5 cm -1 obtained for sulfurization temperatures of 1000 °C. X-ray diffraction analysis and SEM indicate enhanced crystallization at the higher annealing temperatures, but no evidence for a crystalline solid solution between the BaZrO 3 and BaZrS 3 phases is found. The charge carrier sum mobility estimated from optical-pump-terahertz-probe spectroscopy indicates increasing mobilities with increasing sulfurization temperature, reaching maximum values of up to ∼2 cm 2 V -1 s -1 .
Databáze:	MEDLINE
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