| Autor: |
Wang DS; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States., Ciccarino CJ; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States.; Department of Chemistry and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138, United States., Flick J; Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States., Narang P; Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States. |
| Abstrakt: |
Two-dimensional materials can be crafted with structural precision approaching the atomic scale, enabling quantum defects-by-design. These defects are frequently described as "artificial atoms" and are emerging optically addressable spin qubits. However, interactions and coupling of such artificial atoms with each other, in the presence of the lattice, warrants further investigation. Here we present the formation of "artificial molecules" in solids, introducing a chemical degree of freedom in control of quantum optoelectronic materials. Specifically, in monolayer hexagonal boron nitride as our model system, we observe configuration- and distance-dependent dissociation curves and hybridization of defect orbitals within the bandgap into bonding and antibonding orbitals, with splitting energies ranging from ∼10 meV to nearly 1 eV. We calculate the energetics of cis and trans out-of-plane defect pairs CH B -CH B against an in-plane defect pair C B -C B and find that in-plane defect pair interacts more strongly than out-of-plane pairs. We demonstrate an application of this chemical degree of freedom by varying the distance between C B and V N of C B V N and observe changes in the predicted peak absorption wavelength from the visible to the near-infrared spectral band. We envision leveraging this chemical degree of freedom of defect complexes to precisely control and tune defect properties toward engineering robust quantum memories and quantum emitters for quantum information science. |
