Large-area integration of two-dimensional materials and their heterostructures by wafer bonding.

Autor: Quellmalz A; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden. arne.quellmalz@eecs.kth.se., Wang X; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden., Sawallich S; Protemics GmbH, Aachen, Germany.; Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany., Uzlu B; Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany.; AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, Germany., Otto M; AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, Germany., Wagner S; AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, Germany., Wang Z; AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, Germany., Prechtl M; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Neubiberg, Germany., Hartwig O; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Neubiberg, Germany., Luo S; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Neubiberg, Germany., Duesberg GS; Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, Universität der Bundeswehr München, Neubiberg, Germany., Lemme MC; Chair of Electronic Devices, Faculty of Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany.; AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), Aachen, Germany., Gylfason KB; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden., Roxhed N; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden., Stemme G; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden., Niklaus F; Division of Micro and Nanosystems, School of Electrical Engineering and Computer Science, KTH Royal Institute of Technology, Stockholm, Sweden. frank.niklaus@eecs.kth.se.
Jazyk: angličtina
Zdroj: Nature communications [Nat Commun] 2021 Feb 10; Vol. 12 (1), pp. 917. Date of Electronic Publication: 2021 Feb 10.
DOI: 10.1038/s41467-021-21136-0
Abstrakt: Integrating two-dimensional (2D) materials into semiconductor manufacturing lines is essential to exploit their material properties in a wide range of application areas. However, current approaches are not compatible with high-volume manufacturing on wafer level. Here, we report a generic methodology for large-area integration of 2D materials by adhesive wafer bonding. Our approach avoids manual handling and uses equipment, processes, and materials that are readily available in large-scale semiconductor manufacturing lines. We demonstrate the transfer of CVD graphene from copper foils (100-mm diameter) and molybdenum disulfide (MoS 2 ) from SiO 2 /Si chips (centimeter-sized) to silicon wafers (100-mm diameter). Furthermore, we stack graphene with CVD hexagonal boron nitride and MoS 2 layers to heterostructures, and fabricate encapsulated field-effect graphene devices, with high carrier mobilities of up to [Formula: see text]. Thus, our approach is suited for backend of the line integration of 2D materials on top of integrated circuits, with potential to accelerate progress in electronics, photonics, and sensing.
Databáze: MEDLINE
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