Mapping of integrated PIN diodes with a 3D architecture by scanning microwave impedance microscopy and dynamic spectroscopy.

Autor:	Coq Germanicus R; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France., De Wolf P; Bruker Nano Surfaces, 112 Robin Hill Road, CA 93117, Santa Barbara, USA., Lallemand F; Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France., Bunel C; Murata Integrated Passive Solutions, 2 Rue de la Girafe, 14000 Caen, France., Bardy S; NXP Semiconductors, Esplanade Anton Philips 2, 14905, Colombelles, France., Murray H; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France., Lüders U; Normandie Université, ENSICAEN, UNICAEN, CNRS, CRISMAT, 14000 Caen, France.
Jazyk:	angličtina
Zdroj:	Beilstein journal of nanotechnology [Beilstein J Nanotechnol] 2020 Nov 23; Vol. 11, pp. 1764-1775. Date of Electronic Publication: 2020 Nov 23 (Print Publication: 2020).
DOI:	10.3762/bjnano.11.159
Abstrakt:	This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both "front end of line" (FEOL) (doped semiconducting layers) and "back end of line" (BEOL) layers (metallization, trench dielectric, and isolation) of highly integrated microelectronic devices. Based on atomic force microscopy, an electromagnetically shielded and electrically conductive tip is used in scanning microwave impedance microscopy (sMIM). sMIM allows for the characterization of the local electrical properties through the analysis of the microwave impedance of the metal-insulator-semiconductor nanocapacitor (nano-MIS capacitor) that is formed by tip and sample. A highly integrated monolithic silicon PIN diode with a 3D architecture is analysed. sMIM measurements of the different layers of the PIN diode are presented and discussed in terms of detection mechanism, sensitivity, and precision. In the second part, supported by analytic calculations of the equivalent nano-MIS capacitor, a new multidimensional approach, including a complete parametric investigation, is performed with a dynamic spectroscopy method. The results emphasize the strong impact, in terms of distinction and location, of the applied bias on the local sMIM measurements for both FEOL and BEOL layers. (Copyright © 2020, Coq Germanicus et al.; licensee Beilstein-Institut.)
Databáze:	MEDLINE
Externí odkaz:	Zobrazit plný text záznamu